Research Scientist

 

 

  • Apply your working knowledge and proficiencies, to the development of next generation RF power devices and circuits for wideband cellular infrastructure
  • Define new design methodologies for future product platform developments
  • Create platform defining new devices and design tools for future product developments
  • Create and develop crucial IP in the areas of high efficiency and wideband PA’s
  • Provide crucial feedback to the technology development teams to ensure the continued success of our class leading GaN technology.

 

What you need for success:

  • BS, MS or PhD in EE related fields
  • >3 years High Power RF circuit design experience, preferred to also have RF power device design experience.
  • Expert level in RF/EM simulation tools; ADS or AWR (preferably both) and preferably also with HFSS or similar EM simulation tool.
  • Experience with passive and active load-pull techniques and equipment.
  • Should be expert at the following:
    • Doherty and other load modulated PA circuit and device designs with GaN devices
    • PA designs in various classes of operation used in RF power devices (A, B, C, F, F’)
  • Should have excellent troubleshooting skills and the ability to teach and learn in a dynamic, collaborative environment.